| PART |
Description |
Maker |
| HYB18H256321BF HYB18H256321BF-11_12_14 |
256-Mbit GDDR3 Graphics RAM GDDR3 Graphics RAM
|
Qimonda AG
|
| W641GG2JB-14 |
1-Gbit GDDR3 Graphics SDRAM
|
Winbond
|
| HYB18H512321BF-11/12/14 HYB18H512321BF-08/10 |
512-Mbit GDDR3 Graphics RAM
|
Qimonda
|
| K4D553238F-GC33 K4D553238F-GC36 K4D553238F-GC2A K4 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4D553238F-JC K4D553238F-JC2A K4D553238F-JC33 K4D5 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
; Accuracy: 1%; Current Rating:5A; Current Ratio:100:5 A; Terminal Type:Leaded RoHS Compliant: Yes 56Mbit GDDR SDRAM内存
8M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144
8M X 32 DDR DRAM, 0.6 ns, PBGA144 LEAD FREE, FBGA-144
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
DiCon Fiberoptics, Inc.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HY5DU283222Q HY5DU283222Q-45 HY5DU283222Q-55 HY5DU |
GDDR SDRAM - 128Mb
128M(4MX32) GDDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
| NAND08GW3B2AN1E NAND08GW3B2AN1F NAND04GW3B2AN1E NA |
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND01G-B2B NAND01GR3B2CN6E NAND02GR3B2CN6E NAND01 |
1-Gbit, 2-Gbit, 2112-byte/1056-word page, 1.8 V/3 V, NAND flash memory
|
Numonyx B.V
|
| HYB18H256321AF-14 HYB18H256321AFL20 |
8M X 32 SYNCHRONOUS GRAPHICS RAM, 0.25 ns, PBGA136
8M X 32 SYNCHRONOUS GRAPHICS RAM, 0.35 ns, PBGA136
|
INFINEON TECHNOLOGIES AG
|
| V23838-M305-M56 |
Transceivers by Form-factor MSA - SFP Multimode 850 nm; 2.125/ 1.062 Gbit/s FC; 1.25 Gbit/s GBE; LC Connector
|
Infineon
|
| MSM54V25632A-10AGBK4 MSM54V25632A-12AGBK4 |
131,072-word x 32-bit x 2-bank synchronous graphics RAM
|
OKI electronic components
|
